InGaAs

The spectrum of low-level photon emissions caused by semiconductor crystal grid defects matches exactly the most sensitive realm of SWIR cameras fitted with thermoelectrically cooled InGaAs- or HgCdTe area sensors. Such sensors are therefore well suited for failure analysis and quality assurance tasks in semiconductor manufacturing. The positive results of these procedures can be successfully migrated to the economical characterization of nano-technology devices.

Even on moonless but starlit nights, highly sensitive InGaAs cameras still produce good images for short-wavelength infrared. By thinning the image sensor chip and with illumination right through the substrate, the wavelength range of the detectors can be extended into the visible spectrum to then span 400 – 1700 nm. Together with uncooled microbolometer arrays for long-wavelength infrared, this allows the design of universal analysis tools which can take advantage of the fusion of optical and thermal images.